characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250 a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125 c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1.0ma) 050-5548 rev a maximum ratings all ratings: t c = 25 c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25 c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25 c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/ c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms a na volts min typ max 300 48 0.070 250 1000 100 24 apt30m70bvfr (g) 300 48 192 30 40 370 2.96 -55 to 150 300 4830 1300 apt30m70bvfr (g) 300v 48a 0.070 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. usa 405 s.w. columbia street bend, oregon 97702-1035 phone: (541) 382-8028 fax: (541) 388-0364 europe avenue j.f. kennedy bat b4 parc cadra nord f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 apt website - http://www.advancedpower.com fredfet g d s to-247 power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. ? fast recovery body diode ? 100% avalanche tested ? lower leakage ? popular to-247 package ? faster switching fredfet power mos v ? *g denotes rohs compliant, pb free terminal finish. downloaded from: http:///
dynamic characteristics apt30m70bvfr 050-5548 rev a z jc , thermal impedance ( c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.40.1 0.050.01 0.0050.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 source-drain diode ratings and characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d [cont.]) peak diode recovery dv / dt 5 reverse recovery time(i s = -i d [cont.], di / dt = 100a/ s) reverse recovery charge(i s = -i d [cont.], di / dt = 100a/ s) peak recovery current(i s = -i d [cont.], di / dt = 100a/ s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps symbol c iss c oss c rss q g q gs q gd t d (on) t r t d (off) t f characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25 c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25 c r g = 1.6 min typ max 4890 5870 882 1235 277 415 152 225 35 52 66 99 14 28 21 42 57 85 10 20 unit pf nc ns min typ max 48 192 1.3 5 t j = 25 c 225 t j = 125 c 400 t j = 25 c 1.0 t j = 125 c 4.2 t j = 25 c 10 t j = 125 c 20 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25 c, l = 1.13mh, r g = 25 , peak i l = 48a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5 i s -i d [cont.], di / dt = 100a/ s, v dd v dss , t j 150 c, r g = 2.0 , v r = 200v. apt reserves the right to change, without notice, the specifications and information contained herein. thermal characteristics symbol r jc r ja min typ max 0.34 40 unit c/w characteristicjunction to case junction to ambient apt30m70bvfr(g) downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature ( c) t j , junction temperature ( c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature ( c) t c , case temperature ( c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 30 60 90 120 150 0 2 4 6 8 10 02468 02 04 06 08 01 0 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 apt30m70bvfr (g) i d = 0.5 i d [cont.] v gs = 10v 100 8060 40 20 0 1.31.2 1.1 1.0 0.9 1.201.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 100 8060 40 20 0 100 8060 40 20 0 5040 30 20 10 0 2.52.0 1.5 1.0 0.5 0.0 050-5548 rev a v gs =10v v gs =20v normalized to v gs = 10v @ 0.5 i d [cont.] v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle t j = +25 c t j = -55 c t j = +125 c t j = +125 c t j = +25 c t j = -55 c v gs =7v, 10v & 15v 5.5v 4.5v 5v 4v 5.5v 4.5v 5v 4v v gs =15v 6v v gs =10v v gs =7v 6v downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 5 10 50 100 300 .01 .1 1 10 50 0 50 100 150 200 250 300 0 0.4 0.8 1.2 1.6 2.0 apt30m70bvfr (g) t c =+25 c t j =+150 c single pulse 200100 5010 51 .5.1 2016 12 84 0 i d = i d [cont.] 15,00010,000 5,0001,000 500100 200 100 5010 51 .5.1 050-5548 rev a operation here limited by r ds (on) 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. to-247 package outline c rss c oss c iss v ds =150v v ds =240v v ds =60v t j =+150 c t j =+25 c 10 s 1ms10ms 100ms dc 100 s e1 sac: tin, silver, copper downloaded from: http:///
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